2N4410 npn silicon transistor description: the central semiconductor 2N4410 is a small signal npn silicon transistor, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. marking: full part number to-92 case maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 120 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 5.0 v continuous collector current i c 250 ma power dissipation p d 625 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 200 c/w thermal resistance jc 83.3 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =100v 10 na i cbo v cb =100v, t a =100c 1.0 a i ebo v eb =4.0v 100 na bv cbo i c =10a 120 v bv cex v be =5.0v, i c =500a, r be =8.2k 120 v bv ceo i c =1.0ma 80 v bv ebo i e =10a 5.0 v v ce(sat) i c =1.0ma, i b =100a 200 mv v be(sat) i c =1.0ma, i b =100a 800 mv v be(on) v ce =5.0v, i c =1.0ma 800 mv h fe v ce =1.0v, i c =1.0ma 60 h fe v ce =1.0v, i c =10ma 60 400 f t v ce =10v, i c =10ma, f=20mhz 60 300 mhz c ob v cb =10v, i e =0, f=1.0mhz 12 pf c ib v eb =0.5v, i c =0, f=1.0mhz 50 pf r0 (18-october 2010) www.centralsemi.com
2N4410 npn silicon transistor lead code: 1) emitter 2) base 3) collector marking: full part number to-92 case - mechanical outline www.centralsemi.com r0 (18-october 2010)
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